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FLL2400IU-2C
L-Band High Power GaAs FET FEATURES
* * * * Push-Pull Configuration High Power Output: 240W (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation.
DESCRIPTION
The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is well suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
* Solid State Base-Station Power Amplifier. * W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 230 -65 to +175 +175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 367 and -161 mA respectively with gate resistance of 1.5. 3. The operating channel temperature (Tch) and case temperature (Tc) should not exceed 145C and 80C respectively.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C)
Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Thermal Resistance CASE STYLE: IU
Note 1: The RF test are performed using a P.W. = 1msec., Duty Cycle = 20%
Symbol IDSS Vp VGSO Pout GL Rth
Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 680mA IGS = -6.8mA
VDS = 12V f = 2.17 GHz IDS = 6.0A Pin = 45.0dBm Note 1
Min. -0.1 -5 52.8 10.5 -
Limits Typ. Max. 32 -0.3 53.8 11.5 0.45 -0.5 0.65
Unit A V V dBm dB C/W
Channel to Case
Edition 1.0 Preliminary November 2000
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FLL2400IU-2C
L-Band High Power GaAs FET
OUTPUT POWER vs. ACPR
-24 -28
VDS = 12V IDS = 6.0A f0 = 2.14GHz f1 = 2.15GHz W-CDMA, 2-Tone Signal Chip Rate: 3.84Mcps
36 32 28
ACPR & IMD (dBc)
-32 -36 -40 -44 -48 -52 -56 -56 30 32 34 36 38 40 42 44 46 48
add IDS(RF) IMD ACPR@5MHz
24 20 16 12 8 4 0
Output Power (dBm)
POWER GAIN vs. FREQUENCY
56
VDS = 12V IDS = 6.0A Po = 47dBm
OUTPUT POWER vs. INPUT POWER
54
VDS =12V IDS = 6.0A f = 2.14GHz
Pout
Output Power (dBm)
13
52 50 48 46 44 42 28 30 32 34 36 38 40 42 44 46 48
Power Gain (dB)
12
11
10
9
Input Power (dBm)
2.0
2.1
2.2
2.3
Frequency (GHz)
2
add (%) & IDS(RF) (A)
FLL2400IU-2C
L-Band High Power GaAs FET
S-PARAMETERS VDS = 12V, IDS = 3000mA FREQUENCY (MHZ)
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000
S11 MAG
.96 .95 .94 .92 .89 .83 .75 .59 .29 .33 .65 .74 .73 .66 .51 .26 .25 .56 .74 .83 .87
S21 ANG MAG
.38 .44 .54 .69 .91 1.23 1.73 2.49 3.58 4.07 3.38 2.71 2.39 2.34 2.47 2.61 2.53 2.09 1.62 1.23 .91
S12 ANG MAG
.01 .01 .01 .01 .01 .01 .02 .02 .03 .04 .04 .03 .03 .03 .04 .04 .04 .04 .03 .02 .02
S22 ANG MAG
.93 .92 .90 .87 .83 .79 .76 .73 .59 .26 .29 .45 .53 .57 .60 .62 .66 .63 .55 .49 .55
ANG
162.90 160.44 157.61 154.92 152.29 149.47 145.40 137.71 122.69 120.03 -178.92 -177.80 176.00 170.13 165.05 157.84 143.72 120.08 86.52 39.21 -12.13
163.50 160.98 157.92 154.29 149.86 144.48 137.49 128.15 123.34 -154.32 -168.04 176.86 165.20 154.02 142.48 141.92 -137.12 -139.05 -152.03 -162.29 -170.06
27.91 17.85 6.09 -7.95 -24.30 -44.26 -68.31 -98.08 -138.58 169.42 124.54 93.33 68.23 44.10 17.00 -13.63 -53.34 -92.50 -126.64 -157.48 174.26
15.94 10.08 2.90 -8.76 -26.71 -48.79 -78.69 -115.43 -166.25 135.08 83.42 47.28 19.42 -7.18 -36.14 -66.67 -106.75 -145.50 -178.55 153.66 125.90
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
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FLL2400IU-2C
L-Band High Power GaAs FET
Case Style "IU"
23.90.25 (0.941) 2.0 MIN. 12-R0.5
1 2
0.1 (0.004)
6
3
2.0 (0.078)
5 4
15.50.15 (0.610)
17.40.15 (0.685)
8.00.15 (0.315)
2.0 MIN.
4-R1.3
1.90.15 (0.075) 2.40.15 (0.094)
10.00.2 (0.393) 30.40.25 (1.181) 34.00.25 (1.339)
4.5 Max. (0.177)
1, 2: 3: 4, 5: 6:
0.70.2
Gate Source Drain Source
Unit: mm (inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1100M200
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